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Conductive 4H-N Silicon Carbide Wafer - Double-Side Polished SiC Wafer for Advanced Applications3x3mm 6PC
Exceptional electrical resistivity ranging from 0.014 to 0.028 Ω·CM, ideal for applications.
Conductive 4H-N Silicon Carbide Wafer - Double-Side Polished SiC Wafer for Advanced Applications3x3mm 6PC
Item #: 156516655

Conductive 4H-N Silicon Carbide Wafer - Double-Side Polished SiC Wafer for Advanced Applications3x3mm 6PC

Item #: 156516655
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Exceptional electrical resistivity ranging from 0.014 to 0.028 Ω·CM, ideal for applications.
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Note: Step Down Voltage Transformer required for using electronics products of US store (110-120). Recommended power converters Buy Now.

What Stands Out

High Purity
Manufactured with high-purity 4H-N silicon carbide, ensuring superior electrical and thermal conductivity for advanced applications.
Double-Side Polished
Features double-side polishing for uniform thickness and enhanced surface quality, minimizing defects and facilitating optimal performance in semiconductor devices.
Versatile Applications
Ideal for a range of advanced applications, including power electronics and photonics, providing flexibility and superior performance compared to traditional substrates.

Product Details

Shop Conductive 4H-N Silicon Carbide Wafer - Double-Side Polished SiC Wafer for Advanced Applications3x3mm 6PC online at a best price in Malawi. B0FKSCJ5RP

Who Should Buy?

Suitable For
  • Semiconductor Engineers

    Ideal for engineers developing silicon carbide devices, enhancing performance and efficiency in semiconductor applications.

  • Research Institutions

    Perfect for laboratories conducting advanced research in materials science, especially in high-energy and high-temperature applications.

  • Microsystem Developers

    Suited for developers working on microelectronics and MEMS applications, benefiting from high thermal conductivity and durability.

Not Suitable For
  • Hobbyists

    Not suitable for casual users or hobbyists due to complexity and specific requirements of SiC processing.

Product Description

Conductive 4H-N Silicon Carbide Wafer - Double-Side Polished SiC Wafer for Advanced Applications3x3mm 6PC

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Customer Questions & Answers

  • Question: What is the substrate thickness?

    Answer: The substrate thickness is 0.35mm.
  • Question: Can this substrate be customized?

    Answer: Yes, customizable options are available to meet specific project requirements.
  • Question: What applications is this substrate ideal for?

    Answer: It is ideal for various semiconductor applications with exceptional electrical resistivity.

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